Phosphorous Diffusion in N2+-Implanted Germanium during Flash Lamp Annealing: Influence of Nitrogen on Ge Substrate Damage and Capping Layer Engineering
| Autor: | Dimitrios Skarlatos, Christos Thomidis, Panagiotis Dimitrakis, M. C. Skoulikidou, D. Velessiotis, Giancarlo Pepponi, Benjamin Colombeau, Vassilios Ioannou-Sougleridis, Mario Barozzi, K. Papagelis, Nikolaos Vouroutzis |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Flash-lamp Materials science Annealing (metallurgy) Inorganic chemistry chemistry.chemical_element Germanium 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Nitrogen Electronic Optical and Magnetic Materials chemistry Chemical engineering 0103 physical sciences 0210 nano-technology |
| Zdroj: | ECS Journal of Solid State Science and Technology. 6:P418-P428 |
| ISSN: | 2162-8777 2162-8769 |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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