A 243-GHz$F_t$and 208-GHz$F_max$, 90-nm SOI CMOS SoC Technology With Low-Power mmWave Digital and RF Circuit Capability

Autor:	S. Chaloux, S. Sweeney, Mukesh Khare, Lawrence F. Wagner, Jean-Olivier Plouchart, Jonghae Kim, Shreesh Narasimha, Noah Zamdmer, Robert Trzcinski
Rok vydání:	2005
Předmět:	Physics business.industry Electrical engineering Distributed amplifier Silicon on insulator Integrated circuit Diffusion capacitance Microstrip Electronic Optical and Magnetic Materials law.invention CMOS Parasitic capacitance law Electrical and Electronic Engineering business Varicap
Zdroj:	IEEE Transactions on Electron Devices. 52:1370-1375
ISSN:	0018-9383
Popis:	A 90-nm silicon-on-insulator (SOI) CMOS system on-chip integrates high-performance FETs with 243-GHz F/sub t/, 208-GHz F/sub max/, 1.45-mS//spl mu/m gm, and sub 1.1-dB NFmin up to 26 GHz. Inductor Q of 20, VNCAP of 1.8-fF//spl mu/m/sup 2/, varactor with a tuning range as high as 25:1, and a low-loss microstrip. Transmission lines were successfully integrated without extra masks and processing steps. SOI and its low parasitic junction capacitance enables this high level of performance and will expand the use of CMOS for millimeter-wave applications.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::d521b7ea2434939c7e2e173595d8a173 https://doi.org/10.1109/ted.2005.850638 Zobrazit plný text záznamu