On the profile design and optimization of epitaxial Si- and SiGe-base bipolar technology for 77 K applications. I. Transistor DC design considerations
| Autor: | J.M.C. Stork, John D. Cressler, J.Y.-C. Sun, James H. Comfort, Bernard S. Meyerson, Emmanuel F. Crabbe, Gary L. Patton |
|---|---|
| Rok vydání: | 1993 |
| Předmět: |
Materials science
business.industry Transconductance Transistor Bipolar junction transistor Electrical engineering Heterojunction Hardware_PERFORMANCEANDRELIABILITY Semiconductor device Epitaxy Electronic Optical and Magnetic Materials law.invention law Hardware_INTEGRATEDCIRCUITS Optoelectronics Electrical and Electronic Engineering business Leakage (electronics) Electronic circuit |
| Zdroj: | IEEE Transactions on Electron Devices. 40:525-541 |
| ISSN: | 0018-9383 |
| DOI: | 10.1109/16.199358 |
| Popis: | The DC design considerations associated with optimizing epitaxial Si- and SiGe-base bipolar transistors for the 77-K environment are examined in detail. Transistors and circuits were fabricated using four different vertical profiles, three with a graded-bandgap SiGe base, and one with a Si base for comparison. All four epitaxial-base profiles yield transistors with DC properties suitable for high-speed logic applications in the 77-K environment. The differences between the low-temperature DC characteristics of Si and SiGe transistors are highlighted both theoretically and experimentally. A performance tradeoff associated with the use of an intrinsic spacer layer to reduce parasitic leakage at low temperatures and the consequent base resistance degradation due to enhanced carrier freeze-out is identified. Evidence that a collector-base heterojunction barrier effect severely degrades the current drive and transconductance of SiGe-base transistors operating at low temperatures is provided. > |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|