| Autor: |
M. Torkler, L.‐M. Buchmann, W. H. Brünger |
| Rok vydání: |
1992 |
| Předmět: |
|
| Zdroj: |
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 10:2829 |
| ISSN: |
0734-211X |
| DOI: |
10.1116/1.585967 |
| Popis: |
An ion projection system was tested to demonstrate the long‐term stability of lithographic properties. By exposing a resist to He+ ions, the pattern from an open stencil mask was transferred by a surface imaging process into the resist. Even after 12 min exposure the resolution capability still gave patterns of a minimum linewidth of 150 nm. Shifts of the pattern with high accuracy and reproducibility were performed by an octopole deflection unit. A projection mode, which consists of multiple exposures each with a different pattern displacement, was established by activating electric dipole fields. A deflection factor of 3.3 μm/V was obtained. Inducing a quadrupole field, changes in demagnification of opposite signs in x and for y directions (anamorphism) were generated which can be used to compensate for different types of distortion. A relative compression as well as expansion factor of 1.7×10−4 V−1 was determined. Simple two‐dimensional simulation of quadrupole induced pattern displacements were carried out and compared with experiments. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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