Fully-monolithic, 600°C differential amplifiers in 6H-SiC JFET IC technology

Autor: Amita C. Patil, Xiao-An Fu, Mehran Mehregany, Steven L. Garverick
Rok vydání: 2009
Předmět:
Zdroj: CICC
DOI: 10.1109/cicc.2009.5280889
Popis: A family of fully-integrated differential amplifiers was designed and fabricated in 6H-SiC, n-channel JFET integrated-circuit technology. A single-stage amplifier with resistor loads has gain-bandwidth of ∼2.8 MHz, and differential-mode gain that varies by less than 1 dB from 25–600°C. A two-stage amplifier with current-source loads and common-mode feedback in 1st-stage, and resistor loads in 2nd-stage has gain-bandwidth of 1.4 MHz, and differential-mode gain of 69 dB at 576°C, with just 3.6 dB gain-variation from 25–576°C.
Databáze: OpenAIRE