| Autor: |
Oliver Ambacher, Mohamed Alsharef, Rudiger Quay, Erdin Ture, Friedbert van Raay, Frank Schwierz, Ralf Granzner, Peter Brückner |
| Rok vydání: |
2015 |
| Předmět: |
|
| Zdroj: |
2015 10th European Microwave Integrated Circuits Conference (EuMIC). |
| DOI: |
10.1109/eumic.2015.7345077 |
| Popis: |
AlGaN/GaN high-electron mobility transistors (HEMTs) with varied Tri-gate topologies have been fabricated and influences of the fin-shaped nano-channels on device parasitics are examined. Through S-parameter measurements and modelling of the designed Fin-FETs, a detailed RF investigation on intrinsic device parameters is performed under different biasing schemes. Corresponding RF performances and transfer characteristics as well as the derived small-signal parameters of the measured devices are extracted by employing 3-D EM FET model analysis at 110 GHz. Comparisons between the designed fin-geometries and intrinsic device parameters have proven flatter gm, gds and fT responses, which are presented through experimental results in detail for the first time. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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