Tunnel injection and phonon‐assisted recombination in multiple quantum‐well AlxGa1−xAs‐GaAsp‐nheterostructure lasers grown by metalorganic chemical vapor deposition
| Autor: | Russell D. Dupuis, E. A. Rezek, P.D. Dapkus, R. Chin, Bruce A. Vojak, Nick Holonyak |
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| Rok vydání: | 1979 |
| Předmět: |
Materials science
Phonon business.industry General Physics and Astronomy Heterojunction Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Semiconductor laser theory Condensed Matter::Materials Science Tunnel effect Condensed Matter::Superconductivity Optoelectronics Spontaneous emission Tunnel injection business Quantum tunnelling Quantum well |
| Zdroj: | Journal of Applied Physics. 50:5835-5840 |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.326730 |
| Popis: | Stripe‐geometry multiple quantum‐well AlxGa1−xAs‐GaAs heterostructure laser diodes are described that exhibit tunnel injection with LO phonon participation in the injection and the recombination process. The diodes are constructed by Zn diffusion into n‐type AlxGa1−xAs‐GaAs heterostructures grown by metalorganic chemical vapor deposition (MO‐CVD). At bias voltages V< (1/q) Eg(AlGaAs) in which tunneling is important, laser operation (4.2–77 °K) of these quantum‐well diodes is obtained an LO phonon energy (∼36 meV) below the first electron–to–heavy‐hole (No. 1 e→hh) confined‐particle transitions of the coupled GaAs quantum wells (six wells, Lz∼120 A). In the normal injection bias range V∼ (1/q) Eg(AlGaAs), recombination radiation is identified on the No. 2 e→hh transitions and an LO phonon energy below the second electron‐to‐light‐hole (No. 2′ e→lh) confined‐particle transitions. Phonon involvement in the recombination process is identified also in the range between confined‐particle transition 1‐1′ and 2. |
| Databáze: | OpenAIRE |
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