Distinguishing between buried semiconductor/metal contacts and hybrid semiconductor/metal/liquid contacts at n-gallium arsenide/potassium hydroxide-selenium (Se-/2-)(aq) junctions
| Autor: | Ming X. Tan, Nathan S. Lewis, Ashish Bansal, Bruce J. Tufts |
|---|---|
| Rok vydání: | 1993 |
| Předmět: |
chemistry.chemical_classification
business.industry Inorganic chemistry General Engineering Electrochemistry Metal chemistry.chemical_compound Semiconductor chemistry Chemisorption visual_art Electrode visual_art.visual_art_medium Physical chemistry Physical and Theoretical Chemistry business Inorganic compound Metallocene Extrinsic semiconductor |
| Zdroj: | The Journal of Physical Chemistry. 97:7309-7315 |
| ISSN: | 1541-5740 0022-3654 |
| DOI: | 10.1021/j100130a031 |
| Popis: | The current-voltage properties of n-GaAs photoanodes have been evaluated in KOH-Se[sup [minus]]/2[minus]/(aq), CH[sub 3]CN-Fe[sup +]/0, and CH[sub 3]CN-MV[sup 2+]/+ solutions. Chemisorption of transition-metal ions (Rh[sup III], Co[sup III], Ru[sup III], Os[sup III]) onto n-GaAs has been shown previously to effect improved photoanode behavior for n-GaAs/KOH-Se[sup [minus]]/2[minus](aq) contacts, but it is not clear whether the chemisorbed metal forms a buried semiconductor/metal junction or results in a hybrid semiconductor/metal/liquid contact. After chemisorption of transition-metal ions, n-GaAs photoanodes displayed different open circuit voltages in contact with each electrolyte solution investigated. The role of the chemisorbed metal in the n-GaAs/M/KOH-Se[sup [minus]]/2[minus](aq) system is, therefore, best described as catalyzing interfacial charge transfer at the semiconductor/liquid interface, as opposed to establishing a semiconductor/metal or semiconductor/insulator/metal contact that is exposed to, but not influenced by, the electrolyte solution. 65 refs., 6 figs., 2 tabs. |
| Databáze: | OpenAIRE |
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