Definition of effective channel length (Leff) in deep submicron MOSFETs based on numerically simulated surface potential
| Autor: | G.F. Niu, R.M.M. Chen, G. Ruan, T.A. Tang |
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| Rok vydání: | 1997 |
| Předmět: |
Surface (mathematics)
Physics MOSFET Materials Chemistry Electronic engineering Electrical measurements Substrate (electronics) Electrical and Electronic Engineering Condensed Matter Physics Independence (probability theory) Electronic Optical and Magnetic Materials Communication channel Computational physics |
| Zdroj: | Solid-State Electronics. 41:1377-1382 |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/s0038-1101(97)00076-2 |
| Popis: | A new definition of L eff which agrees well with electrical measurements using the channel resistance method is proposed, based on numerically simulated surface potential. Using the L eff definition, the physics underlying the fact that L eff can be considerably longer than the metallurgical channel length L eff is explored, and the independence of L eff on substrate bias V sub is clarified. The gate bias dependence of L eff in LDD MOSFET is clearly reflected by the proposed L eff definition. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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