Evaluation of the Correspondence between Carbon Incorporation and the Development of c(4×4) Domains
| Autor: | Tadashi Akahane, Masayuki Harashima, Manabu Moriyama, Masasuke Takata, Kanji Yasui |
|---|---|
| Rok vydání: | 2005 |
| Předmět: |
Materials science
Thermal desorption spectroscopy General Engineering Analytical chemistry General Physics and Astronomy chemistry.chemical_element Substrate (electronics) C-4 Spectral line law.invention chemistry.chemical_compound Crystallography chemistry law Silicon carbide Scanning tunneling microscope Carbon Layer (electronics) |
| Zdroj: | Japanese Journal of Applied Physics. 44:1915 |
| ISSN: | 1347-4065 0021-4922 |
| DOI: | 10.1143/jjap.44.1915 |
| Popis: | Using the temperature programmed desorption (TPD) method and a scanning tunneling microscope (STM), the correspondence between carbon incorporation into a Si(001) substrate and the development of a c(4×4) area on a surface has been investigated. In TPD spectra, γ peaks have been observed for substrates exposed to various amounts of monomethylsilane (MMS) at 660°C, which indicates the occurrence of carbon incorporation into the subsurface layer. From estimations, it has been found that the area of a γ peak is increased with exposure time. On the other hand, STM images have revealed that a c(4×4) surface consists of both (2×1) domains and c(4×4) domains. As the amount of MMS exposure increases, the c(4×4) domain expands and the entire surface is covered with a c(4×4) structure at 280 L. By comparing the area of a γ peak with the c(4×4) coverage at each exposure condition, it has been found that the relationship between them is approximately linear. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|