| Popis: |
The paper presents the calculations and research results of the complex conductivity components of AIIIBV type semiconductors structures determined using a phenomenological approach, which is based on the ratio for the inverse effective mass of charge carriers, obtained by decomposing into a Taylor series and limiting this series to two members, which greatly simplifies the final calculation algorithm. The relation for the complex low-signal microwave conductivity is obtained and its frequency characteristics are investigated. The case of the cumulative influence of electric and magnetic fields on the semiconductor is investigated, as a result it "splitting" of the maximum in the diffusion induction characteristic is revealed for large values of the magnetic field induction. |
