LPE In1−xGaxP1−zAsz(x∼0.12,z∼0.26) DH laser with multiple thin‐layer (<500 Å) active region

Autor:	J. D. Fairing, Bruce A. Vojak, G. E. Stillman, D. L. Keune, J. A. Rossi, E. A. Rezek, Nick Holonyak
Rok vydání:	1977
Předmět:	Fabrication Thin layers Materials science Physics and Astronomy (miscellaneous) business.industry Inorganic chemistry Semiconductor device Laser Epitaxy law.invention Semiconductor laser theory law Optoelectronics Emission spectrum Stimulated emission business
Zdroj:	Applied Physics Letters. 31:288-290
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.89665
Popis:	A liquid‐phase‐epitaxial (LPE) double‐heterojunction (DH) laser structure with an ∼1‐μm ’’active region’’ consisting of ≳20 In1−xGaxP1−zAsz and InP lattice‐matched thin layers is described. The thin‐layer dimensions are small enough (
Databáze:	OpenAIRE
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