Al2O3 on Si(100) and Ge(100)
Autor: | E. Bertel, B. Konrad, C. A. Schug, B. Eisenhut, W. Steinmann |
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Rok vydání: | 1990 |
Předmět: |
Auger electron spectroscopy
Low-energy electron diffraction Silicon Analytical chemistry chemistry.chemical_element Germanium Surfaces and Interfaces Condensed Matter Physics Surfaces Coatings and Films Amorphous solid chemistry X-ray photoelectron spectroscopy Monolayer Materials Chemistry Deposition (law) |
Zdroj: | Surface Science. 225:58-62 |
ISSN: | 0039-6028 |
DOI: | 10.1016/0039-6028(90)90423-6 |
Popis: | Sintered alumina was evaporated onto Si(100) and Ge(100) substrates by means of an electron beam evaporator. The samples were investigated by Auger electron spectroscopy, low energy electron diffraction and photoelectron spectroscopy. The deposited films were found to consist of stoichiometric Al2O3 and to grow in islands, which coalesce for coverages larger than seven monolayers, approximately. All Al2O3 deposits could be shown to be amorphous. |
Databáze: | OpenAIRE |
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