Traps spectroscopy of the Si3Ni4 layer using localized charge-trapping nonvolatile memory device

Autor:	Boaz Eitan, Yosi Shacham-Diamand, Ilan Bloom, Eli Lusky, Assaf Shappir
Rok vydání:	2004
Předmět:	Full width at half maximum Range (particle radiation) Materials science Physics and Astronomy (miscellaneous) Band gap Analytical chemistry Thermionic emission Deep-level trap Trapping Nitride Spectroscopy Molecular physics
Zdroj:	Applied Physics Letters. 85:669-671
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.1774272
Popis:	A spectroscopy method is proposed and implemented for Si3Ni4 layer using the NROM® cell and the gate-induced-drain-leakage measurement. The proposed method allows probing of both electron and hole traps in the entire band gap with almost no fitting parameters. The energy levels of occupied charge traps are extracted following a thermionic emission model. It is found that the peak energy distribution of the electron traps is located ∼2.2eV below the nitride conduction band with a full width at half maximum (FWHM) of 0.16eV, while the peak energy distribution of the hole traps is located ∼1.5eV above the nitride valence band with a FWHM of 0.64eV. Based on these results, the retention loss of the NROM cell is successfully predicted over a wide range of temperatures and time scales.
Databáze:	OpenAIRE
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