Aliovalent MnTi and GaTi substitution in high-temperature piezoelectric (x)Bi(Zn0.5Zr0.5)O3—(y)BiScO3—(100 – x − y)PbTiO3
| Autor: | Ali Sayir, Alp Sehirlioglu, Ben Kowalski |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Phase boundary Ternary numeral system Piezoelectric coefficient Materials science Mechanical Engineering Analytical chemistry Mineralogy Substitution (algebra) 02 engineering and technology Dielectric 021001 nanoscience & nanotechnology 01 natural sciences Piezoelectricity Mechanics of Materials Electric field 0103 physical sciences Dissipation factor General Materials Science 0210 nano-technology |
| Zdroj: | Journal of Materials Science. 51:6761-6769 |
| ISSN: | 1573-4803 0022-2461 |
| DOI: | 10.1007/s10853-016-9963-y |
| Popis: | Aliovalent substitution of 1–2 % Mn and Ga for Ti has been carried out in the high-temperature ternary system (x)Bi(Zn0.5Zr0.5)O3—y)BiScO3—(100−x−y)PbTiO3 near the morphotropic phase boundary, specifically 2.5BZZ-37.5BS-60PT in an attempt to reduce the loss tangent. Modifications of this particular composition were chosen due its high-Curie temperature of 420 °C and excellent piezoelectric coefficient of 520 pm/V. Dielectric, piezoelectric, and electromechanical properties were characterized as a function of temperature, frequency, and electric field for all compositions. Small concentrations of Mn and Ga were shown to increase both the electrical and mechanical quality factors, with a Q m and Q e of 300 and 150, respectively, from room temperature up to 300 °C for Mn-doped compositions. |
| Databáze: | OpenAIRE |
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