Effect of Atomic Hydrogen on Impurity Reduction in Mombe-Grown GaAs

Autor:	S. Matteson, D. L. Farrington, Tae S. Kim, Yung-Chung Kao, H. D. Shih, Walter M. Duncan
Rok vydání:	1989
Předmět:	chemistry.chemical_classification Materials science Hydrogen Radical Doping Analytical chemistry chemistry.chemical_element Cracking Flux (metallurgy) Hydrocarbon chemistry Impurity Atomic physics Carbon
Zdroj:	MRS Proceedings. 145
ISSN:	1946-4274 0272-9172
DOI:	10.1557/proc-145-57
Popis:	In this paper, the effect of atomic hydrogen on carbon impurity incorporation during the metalorganic-molecular-beam-epitaxy (MOMBE) growth of GaAs is studied. Atomic hydrogen was introduced into the MOMBE chamber during the growth by cracking molecular hydrogen with a high temperature cracker cell. Atomic hydrogen appears to be effective in reducing the background doping level of MOMBE-grown GaAs, presumably by reacting with hydrocarbon radicals. Background doping levels as low as 4 × 1014 cm−3 and room temperature hole mobilities as high as 430 cm2/V-sec were achieved. This result demonstrates that it is feasible to grow high quality GaAs films in MOMBE without using AsH3 or a high flux of As4by introducing atomic hydrogen into the chamber during the growth.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::d4d698f00b478756be77d67d3aa6f18d https://doi.org/10.1557/proc-145-57 Zobrazit plný text záznamu Full text from SpringerLink