Polaronic memory resistors strongly coupled to electrodes

Autor:	A.S. Alexandrov, A.M. Bratkovsky
Rok vydání:	2009
Předmět:	Condensed Matter::Quantum Gases Physics Condensed matter physics Degenerate energy levels Coulomb blockade Electrical element Condensed Matter Physics Polaron Electronic Optical and Magnetic Materials law.invention law Quantum dot Resistor Adiabatic process Degeneracy (mathematics)
Zdroj:	Physical Review B. 80
ISSN:	1550-235X 1098-0121
DOI:	10.1103/physrevb.80.115321
Popis:	Attractive electron correlations due to an electron-vibron interaction can overcome the direct Coulomb repulsion of polarons in deformable molecular quantum dots (MQDs). If it happens, a switching appears in the I-V characteristics of the degenerate nonadiabatic molecular bridges weakly coupled with electrodes providing a route to ultrafast “memristors” (memory resistors) as the basis for future oscillators, amplifiers and other important circuit elements. Here, we extend our theory of polaronic memristors to adiabatic MQDs strongly coupled with leads to show that the degeneracy of MQD (or multilevel energy structure) along with the polaron-polaron attraction is a vital ingredient of its switching behavior in the strong-coupling regime as well.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::d4d253eb591964e6eb55e63d247acc40 https://doi.org/10.1103/physrevb.80.115321 Zobrazit plný text záznamu