A Performance Comparison Between $\beta$ -Ga2O3 and GaN HEMTs
| Autor: | Digbijoy N. Nath, Anamika Singh Pratiyush, Rangarajan Muralidharan, Sandeep Kumar, Rohith Soman |
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| Rok vydání: | 2019 |
| Předmět: |
Electron mobility
Materials science business.industry Transistor Gallium nitride Dissipation Cutoff frequency Electronic Optical and Magnetic Materials law.invention chemistry.chemical_compound chemistry law Optoelectronics Field-effect transistor Radio frequency Electrical and Electronic Engineering business Current density |
| Zdroj: | IEEE Transactions on Electron Devices. 66:3310-3317 |
| ISSN: | 1557-9646 0018-9383 |
| Popis: | We report on the quantitative estimates of various metrics of performance for $\beta $ -Ga2O3-based high electron mobility transistors (HEMTs) for RF and power applications and compare them with III-nitride devices. Device parameters such as electron velocity and current density are estimated based on an optical phonon model reported earlier. 2-D simulation using an appropriate velocity-field relationship was employed to study the device characteristics and to assess the RF performance. It is found that despite a lower cutoff frequency, $\beta $ -Ga2O0 HEMTs are likely to provide higher RF output power compared to GaN HEMTs in the low-frequency regime. However, the thermal resistance (TR) and the channel temperature of $\beta $ -Ga2O3 HEMTs are expected to be significantly higher than those of GaN HEMTs which will pose serious limitations on heat dissipation. $\beta $ -Ga2O3 modulation doped field effect transistor on extremely thinned substrates will have similar TR s as compared to GaN devices on GaN substrates. The cutoff frequency was found to drop by 50% as the power dissipation increases from 1 to 7 W/mm. On the other hand, for estimates of dc power switching performance, we estimate the net losses as a function of device periphery and find that $\sim {8}\times $ – ${10}\times $ lower electron mobility in Ga2O3 devices compared to that in AlGaN/GaN HEMTs will limit its dc switching as well as its ON- state performance in terms of efficiency, loss, and current carrying capability although the blocking voltage can be much higher than in GaN. |
| Databáze: | OpenAIRE |
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