Infrared reflection spectroscopic investigation of adsorption of SiHx(CH3)4?x on Si surfaces
| Autor: | Yosuke Akama, Takehiro Maehama, Michio Niwano, Daisei Shoji, Masanori Shinohara |
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| Rok vydání: | 2002 |
| Předmět: | |
| Zdroj: | Electronics and Communications in Japan (Part II: Electronics). 85:59-65 |
| ISSN: | 1520-6432 8756-663X |
| DOI: | 10.1002/ecjb.1108 |
| Popis: | The absorption process of methylsilanes [SiHx(CH3)4−x(x = 1–3)] onto Si(100) surfaces were investigated by in situ infrared adsorption spectroscopy in the multiple internal reflection geometry. It was established that the exposure of a clean Si(100) (2 × 1) surface to methylsilanes leads to a selective cleavage of SiH bonds. The hydrogen atoms and dissociated species produced in the process adsorb on the dangling bonds of Si dimer, thus forming surface-adsorbed hydrate species SiH, SiH2, and SiH3. It was demonstrated that adsorption of monomethylsilane occurs in two different modes based on reactions of first and second order. In the adsorption process of the first order, the molecule dissociatively adsorbs on both two dangling bonds of a dimer, while in the adsorption reaction of the second order, the surface adsorbed species SiH(CH3) and a pair of hydrogen atoms are adsorbed independently. © 2002 Wiley Periodicals, Inc. Electron Comm Jpn Pt 2, 85(5): 59–65, 2002; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/ecjb.1108 |
| Databáze: | OpenAIRE |
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