High performance back-illuminated MIS structure AlGaN solar-blind ultraviolet photodiodes
| Autor: | Liu Zhe, H. S. Chen, Huanxiang Jiang, Fang-Yuan Fan, W. Y. Han, Zhao Li, Guoqing Miao, Yinbo Chen, Zhipeng Zhang, Hongwei Song |
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| Rok vydání: | 2018 |
| Předmět: |
Materials science
Orders of magnitude (temperature) Photodetector 02 engineering and technology medicine.disease_cause 01 natural sciences law.invention Responsivity law Electric field 0103 physical sciences medicine Electrical and Electronic Engineering 010302 applied physics business.industry 021001 nanoscience & nanotechnology Condensed Matter Physics Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Photodiode Optoelectronics Quantum efficiency 0210 nano-technology business Layer (electronics) Ultraviolet |
| Zdroj: | Journal of Materials Science: Materials in Electronics. 29:9077-9082 |
| ISSN: | 1573-482X 0957-4522 |
| Popis: | A back-illuminated metal–insulator–semiconductor (MIS) structure AlGaN-based solar-blind ultraviolet photodiode is demonstrated for the purpose of overcoming the technical bottleneck caused by high Al content p-AlGaN in p–i–n structure. The device presents a peak responsivity of 0.115 A/W at 270 nm, corresponding to an external quantum efficiency (EQE) of 53% and an ultraviolet/visible rejection ratio of more than three orders of magnitude under zero-bias. Moreover, a response speed around 24 µs and a peak responsivity of 0.154 A/W, corresponding to an EQE of 70.6% will be achieved at a reverse bias of 3 V. The excellent performances of the back-illuminated MIS photodetector can be attributed to the adoption of a thin n-AlGaN layer of Al content gradient which plays a role of completely relaxing the strain of light absorption layer and the introduction of a homogeneous n-AlGaN interlayer into light absorption region which redistributes its electric field in favor of the separation and transport of the photo-generated carriers. |
| Databáze: | OpenAIRE |
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