Synthesis and Bridgman Growth of Ga2S3 Crystals
| Autor: | Askar Bakhadur, I. N. Lapin, Perizat Galiyeva, Valery A. Svetlichnyi, Yury Andreev, Konstantin A. Kokh |
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| Rok vydání: | 2016 |
| Předmět: |
Phase transition
Materials science Mechanical Engineering Analytical chemistry Crystal growth 02 engineering and technology 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences 0104 chemical sciences Crystal Crystallography symbols.namesake Polymorphism (materials science) Mechanics of Materials symbols General Materials Science 0210 nano-technology Raman spectroscopy Anisotropy Powder diffraction Monoclinic crystal system |
| Zdroj: | Key Engineering Materials. 683:71-76 |
| ISSN: | 1662-9795 |
| DOI: | 10.4028/www.scientific.net/kem.683.71 |
| Popis: | In this work, Ga2S3 crystals were obtained by vertical Bridgman method. The presence of cracks in the grown crystals was interpreted as a result of phase transition into monoclinic structure during cooling. This suggests the use of another approach for the growth of high quality samples, e.g. chemical transport method or melt-solution method. Maximal transparency range of 0.48-22.5 μm and at least 10 times higher damage threshold to that for GaSe render anisotropic Ga2S3 crystal among the most prospective crystals for nonlinear applications. |
| Databáze: | OpenAIRE |
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