Compact Models for MOS Transistors: Successes and Challenges
| Autor: | Colin C. McAndrew |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Computer science Transistor Spice Semiconductor device modeling Hardware_PERFORMANCEANDRELIABILITY 01 natural sciences Electronic Optical and Magnetic Materials law.invention law Logic gate 0103 physical sciences MOSFET Hardware_INTEGRATEDCIRCUITS Electronic engineering Electrical and Electronic Engineering Hardware_LOGICDESIGN |
| Zdroj: | IEEE Transactions on Electron Devices. 66:12-18 |
| ISSN: | 1557-9646 0018-9383 |
| DOI: | 10.1109/ted.2018.2849943 |
| Popis: | This paper provides an industry perspective on the present state of compact models for MOS transistors. It highlights the complexity of layout-dependent effects in modern transistors, reviews some common misunderstandings of MOS transistor capacitances, and introduces a new, structurally symmetric, “gate-as-input” equivalent network for these capacitances. Areas of focus for the future model developments are also proposed. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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