Ultraviolet light tunable single walled carbon nanotubes/n-Si junction diode
| Autor: | Zhang Qicheng, Christopher E. Kehayias, A. T. Charlie Johnson, Nicholas J. Pinto, Alejandro J. Cruz-Arzon, Suh Yeonjoon, Kelotchi S. Figueroa |
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| Rok vydání: | 2022 |
| Předmět: |
Materials science
Annealing (metallurgy) business.industry Mechanical Engineering Metals and Alloys Carbon nanotube Radiation Condensed Matter Physics Electronic Optical and Magnetic Materials law.invention Mechanics of Materials law Materials Chemistry Ultraviolet light Optoelectronics Wafer Charge carrier Irradiation business Diode |
| Zdroj: | Synthetic Metals. 283:116967 |
| ISSN: | 0379-6779 |
| Popis: | Semiconducting p-doped single walled carbon nanotubes (SWCNT) were deposited at the edge of a cleaved n-Si/SiO2 wafer. The p-n junction formed at the SWCNT/n-Si interface was tested in the presence of UV irradiation, and an immediate decrease was observed in the diode on-state current upon UV exposure. The diode ideality parameter and turn-on voltage however stayed relatively constant at 1.9 and 0.65 V respectively during the first ten minutes of UV exposure. With prolonged UV irradiation beyond 10 min these parameters increased, and the on-state current decreased by a factor of 400. We attribute this to a change in charge carriers from holes to electrons in the SWCNT’s due to UV induced photo-desorption of O2. Annealing in air at 70 °C resets the diode to its initial operating condition, thus the photo desorption process is reversible and the diode reusable. The diode was successfully tested as a signal rectifier, and its potential to sense UV radiation makes it multifunctional. It also provides a useful platform to study UV induced charge dynamics at the SWCNT/n-Si interface as carriers in the SWCNT’s switch from hole to electrons and vice versa. |
| Databáze: | OpenAIRE |
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