Schottky enhancement of contacts to n-(In0.52Al0.48)As using PdAl as a metallization
| Autor: | D. Ingerly, C. F. Lin, C. Pelto, Y. A. Chang |
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| Rok vydání: | 2002 |
| Předmět: |
Condensed matter physics
Annealing (metallurgy) Chemistry Schottky barrier Metallurgy Alloy Intermetallic Schottky diode engineering.material Condensed Matter Physics Electronic Optical and Magnetic Materials Transmission electron microscopy Materials Chemistry engineering Electrical and Electronic Engineering High-resolution transmission electron microscopy Phase diagram |
| Zdroj: | Journal of Electronic Materials. 31:1330-1336 |
| ISSN: | 1543-186X 0361-5235 |
| Popis: | PdAl was selected as a reactive contact to n-(In0.52Al0.48)As with the intention of forming a thin, AlAs-enriched interlayer of graded (In1−xAlx)As semiconductor alloy, following rapid thermal annealing. Selection of PdAl was based on the experimentally established existence of a quasi-reciprocal phase relationship. A Schottky barrier enhancement of 0.07 eV (measured by current-voltage (I-V)) and 0.09 eV (measured by capacitance-voltage (C-V)) was found following a 1-min anneal at 450°C. High-resolution transmission electron microscopy (HRTEM) examination showed the presence of an edge dislocation in the interlayer alloy, suggesting an enrichment of AlAs. Schottky barrier enhancement is in qualitative agreement with the prediction of the combined thermodynamic/kinetic model. |
| Databáze: | OpenAIRE |
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