Growth of thallium containing III–V materials by gas-source molecular beam epitaxy
| Autor: | M.R. Gokhale, Stephen R. Forrest, Jian Wei |
|---|---|
| Rok vydání: | 1999 |
| Předmět: |
Diffraction
business.industry Scanning electron microscope Inorganic chemistry Analytical chemistry chemistry.chemical_element Condensed Matter Physics Inorganic Chemistry Characterization methods chemistry Inert pair effect Materials Chemistry Thallium Photonics business Layer (electronics) Molecular beam epitaxy |
| Zdroj: | Journal of Crystal Growth. 203:302-308 |
| ISSN: | 0022-0248 |
| Popis: | The synthesis of thallium containing III–V compounds for long wavelength (>1.7 μm) photonic device applications is investigated using gas-source molecular beam epitaxy. With this approach, we attempted the growth of homogenous InTlP and InGaTlAs alloys on InP substrates. At low growth temperatures (⩽320°C), thallium segregates into droplets at the surface, whereas these droplets evaporate from the surface at higher temperatures. Various characterization methods such as X-ray diffraction, scanning electron microscopy, and energy dispersive X-ray indicate no significant thallium incorporation in the bulk layer. One possible reason for the inability of thallium to incorporate into III–V compounds is due to the formation of monovalent Tl-group V compounds arising from the “inert pair effect”. |
| Databáze: | OpenAIRE |
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