A 10‐ kV SiC ‐ MOSFET (Gen‐3) Half‐Bridge Module‐Based Isolated Bidirectional DC – DC Converter Block for Medium‐Voltage High‐Power Applications

Autor:	Subhashish Bhattacharya, Yos Prabowo, Sayan Acharya, Satish Rengarajan, Ritwik Chattopadhyay, Anup Anurag
Rok vydání:	2020
Předmět:	Materials science business.industry Half bridge Block (telecommunications) MOSFET Electrical engineering Electrical and Electronic Engineering business Dc dc converter Power (physics) Voltage
Zdroj:	IEEJ Transactions on Electrical and Electronic Engineering. 16:127-138
ISSN:	1931-4981 1931-4973
DOI:	10.1002/tee.23275
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::d498a03e2de5f1ee1dbbd1473f40a5c2 https://doi.org/10.1002/tee.23275 Zobrazit plný text záznamu Plný text