High Performance GaAlAs LED Structures By Vapour Phase (MOCVD) Epitaxy

Autor:	N. W. Forbes, R. M. Ash, R. R. Bradley
Rok vydání:	1986
Předmět:	Materials science Optical fiber business.industry chemistry.chemical_element Epitaxy law.invention Gallium arsenide chemistry.chemical_compound chemistry law Aluminium Phase (matter) Optoelectronics Quantum efficiency Metalorganic vapour phase epitaxy business Light-emitting diode
Zdroj:	Fibre Optics '86.
ISSN:	0277-786X
Popis:	LEDs have been fabricated by two routes using material grown by MOCVD in the GaAs/GaAlAs materials system. High internal quantum efficiencies have been achieved in both a simple junction isolated device and in a high specification proton isolated LED.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::d492a895e96030001a7ba52b07cf9f87 https://doi.org/10.1117/12.963603 Zobrazit plný text záznamu