Composite silicide gate electrodes—Interconnections for VLSI device technologies
| Autor: | Ning Hsieh, H.J. Geipel, F.R. White, M.H. Ishaq, C.W. Koburger |
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| Rok vydání: | 1980 |
| Předmět: |
Very-large-scale integration
Interconnection Materials science business.industry engineering.material Electronic Optical and Magnetic Materials Tungsten disilicide chemistry.chemical_compound Polycrystalline silicon chemistry Silicide Electrode Electronic engineering engineering Optoelectronics Polycide Electrical and Electronic Engineering business Sheet resistance |
| Zdroj: | IEEE Transactions on Electron Devices. 27:1417-1424 |
| ISSN: | 0018-9383 |
| DOI: | 10.1109/t-ed.1980.20050 |
| Popis: | A potentially severe limit on density, performance, and wirability of polysilicon-gate technologies for VLSI applications, is the high resistivity of polycrystalline silicon. Composite structures of highly conductive molybdenum or tungsten disilicide on top of polysilicon (polycide) are shown to be a viable alternative gate electrode and interconnect level. Sheet resistance values of 1-3 Ω/□ for an integrated structure are easily attainable. IGFET devices fabricated to channel lengths of ≥ 1.4 µm show the polycide devices to be indistinguishable from normal polysilicon gate devices. |
| Databáze: | OpenAIRE |
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