Salt-assisted clean transfer of continuous monolayer MoS 2 film for hydrogen evolution reaction
| Autor: | Cao Khang Nguyen, Yong Soo Kim, Tri Khoa Nguyen, Heung-Yeol Cho, Jong-Won Yun, Farman Ullah |
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| Rok vydání: | 2018 |
| Předmět: |
Tafel equation
Materials science Substrate (chemistry) Nanotechnology 02 engineering and technology Chemical vapor deposition Overpotential 010402 general chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences 0104 chemical sciences Electronic Optical and Magnetic Materials Surface coating Chemical engineering Monolayer Reversible hydrogen electrode Electrical and Electronic Engineering 0210 nano-technology Hydrogen production |
| Zdroj: | Physica B: Condensed Matter. 532:84-89 |
| ISSN: | 0921-4526 |
| DOI: | 10.1016/j.physb.2017.10.026 |
| Popis: | The transfer of two-dimensional (2D) materials from one substrate to another is challenging but of great importance for technological applications. Here, we propose a facile etching and residue-free method for transferring a large-area monolayer MoS2 film continuously grown on a SiO2/Si by chemical vapor deposition. Prior to synthesis, the substrate is dropped with water- soluble perylene-3, 4, 9, 10-tetracarboxylic acid tetrapotassium salt (PTAS). The as-grown MoS2 on the substrate is simply dipped in water to quickly dissolve PTAS to yield the MoS2 film floating on the water surface, which is subsequently transferred to the desired substrate. The morphological, optical and X-ray photoelectron spectroscopic results show that our method is useful for fast and clean transfer of the MoS2 film. Specially, we demonstrate that monolayer MoS2 film transferred onto a conducting substrate leads to excellent performance for hydrogen evolution reaction with low overpotential (0.29 V vs the reversible hydrogen electrode) and Tafel slope (85.5 mV/decade). |
| Databáze: | OpenAIRE |
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