The Influence of the Excited State (ES) Lasing in Quantum Dot-in-a-Well (QDWELL) Structure on the QDWELL Laser Performance in Optical Communication Systems
| Autor: | Y. Ben Ezra, Boris I. Lembrikov |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
Physics
business.industry Physics::Optics 02 engineering and technology Laser 01 natural sciences Semiconductor laser theory law.invention 010309 optics 020210 optoelectronics & photonics Pulse-amplitude modulation Quantum dot Quantum dot laser law Excited state 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Chirp Optoelectronics Physics::Atomic Physics business Lasing threshold |
| Zdroj: | ICTON |
| DOI: | 10.1109/icton.2019.8840393 |
| Popis: | Recently, the theoretical model of the quantum dot (QD) semiconductor lasers has been developed where the excited state (ES) lasing has been taking into account. It has been shown that the ES QD semiconductor laser demonstrates a larger modulation bandwidth, lower frequency chirp and a smaller line enhancement factor (LEF) as compared to the ground state (GS) QD semiconductor lasers. The applications of high-speed directly modulated ES lasers in future optical communications is possible. In this paper, we investigated theoretically the 4 level pulse amplitude modulation (4-PAM) and 8 level PAM (8-PAM) formats of the ES QDWELL laser. We solved numerically the modified rate equation system and have shown that is such cases the QDWELL laser modulation bandwidth is substantially increased. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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