| Autor: |
Kento Okamoto, Tanemasa Asano, Toshifumi Kikuchi, Daisuke Nakamura, Akihiro Ikeda, Hiroshi Ikenoue, Kaname Imokawa |
| Rok vydání: |
2019 |
| Předmět: |
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| Zdroj: |
Materials Science Forum. 963:403-406 |
| ISSN: |
1662-9752 |
| DOI: |
10.4028/www.scientific.net/msf.963.403 |
| Popis: |
We developed a novel KrF excimer laser doping system for 4H-SiC power devices, and demonstrated laser doping of 4H-SiC with Al thin film deposited on the surface. As seen from the results of the Al depth profile, high concentration implantation (~ 1021 cm-3 at the surface) of Al was achieved by laser ablation of the Al thin film. A high, built-in-potential (~3.5 V) of the pn junction diode was clearly seen in the I-V curve. In addition, the contact resistivity of the deposited Al/Ti electrodes on the surface was 1.9 × 10−4 Ωcm2 by TLM (Transmission Line Model). It was confirmed that a high concentration of Al doping and low contact resistivity were achieved by the KrF excimer laser doping system. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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