Optical properties of group-V atom-vacancy pairs in silicon
| Autor: | G. D. Watkins |
|---|---|
| Rok vydání: | 1989 |
| Předmět: |
Nuclear and High Energy Physics
Radiation Silicon chemistry.chemical_element Dichroism Condensed Matter Physics Molecular physics law.invention Nuclear magnetic resonance Atomic orbital chemistry law Atomic electron transition Vacancy defect Atom General Materials Science Molecular orbital Electron paramagnetic resonance |
| Zdroj: | Radiation Effects and Defects in Solids. :487-500 |
| ISSN: | 1029-4953 1042-0150 |
| DOI: | 10.1080/10420158908213023 |
| Popis: | Two optical absorption bands are identified as arising from the negative charge state of each of the P-, As-, and Sb-vacancy pairs in silicon. The more prominent band for each is at 6150, 6000, and 5500 cm−1, respectively. A second broader partially overlapping band at ∼8500 cm−1 is also present for each. Dichroism produced in the bands by uniaxial stress reveals a static Jahn-Teller distortion of opposite sign to that for the neutral state previously studied by EPR. The absorption bands can be identified as electron transitions from filled to empty orbitals of a simple one-electron molecular orbital model for the defect. |
| Databáze: | OpenAIRE |
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