Optoelectronic properties of two-dimensional GaN adsorbed with H, N and O: A first-principle study
| Autor: | Lei Liu, Jian Tian, Sihao Xia, Feifei Lu, Yu Diao |
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| Rok vydání: | 2019 |
| Předmět: |
Physics
business.industry Fermi level General Physics and Astronomy Electronic structure 01 natural sciences 010305 fluids & plasmas symbols.namesake Adsorption Semiconductor Impurity Chemisorption 0103 physical sciences Atom symbols Optoelectronics 010306 general physics business Electronic band structure |
| Zdroj: | Physics Letters A. 383:3018-3024 |
| ISSN: | 0375-9601 |
| Popis: | In this paper, we have investigated optoelectronic properties of two-dimensional GaN adsorbed with non-metal atoms: H, N and O based on first-principle. We find that adsorption of H, N and O atom on 2D GaN is achieved by chemisorption, and the most stable adsorption site is at the top of N atom. Band structure of 2D GaN after adsorbing H atom moves to low energy region and two-dimensional GaN is transformed into an n-type semiconductor. After adsorption of N atom, a new impurity energy appears at the Fermi level, and N adatom could induce magnetism into 2D GaN. Static dielectric constants of 2D GaN increase and adsorption spectrums have extend to infrared band when adsorbing H and N. Strong reflection peaks and strong adsorption peaks after adsorption are located at deep ultraviolet range, which is beneficial for optoelectronic application in the deep ultraviolet. Specifically, two-dimensional GaN adsorbed with H atom is more conducive to manufacture of nano-optoelectronic devices. |
| Databáze: | OpenAIRE |
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