Optical parameters of diode lasers based on an InAsSb/InAsSbP heterostructure
| Autor: | Gennadii I. Ryabtsev, A. S. Gorbatsevich, Yu. P. Yakovlev, L. I. Burov, T. V. Bez'yazychnaya, A. P. Astakhova, A. G. Ryabtsev, M. A. Shchemelev |
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| Rok vydání: | 2008 |
| Předmět: | |
| Zdroj: | Semiconductors. 42:228-231 |
| ISSN: | 1090-6479 1063-7826 |
| Popis: | The rates of radiative recombination (including transitions induced by enhanced luminescence) and nonradiative recombination, internal quantum yield of luminescence, and the matrix element for band-to-band optical transitions were determined for the first time for InAsSb/InAsSbP diode lasers oscillating at wavelengths of 3.1–3.2 μm. It is established that the contribution of nonradiative recombination to the lasing threshold can be as large as 97%. The internal quantum yield of luminescence for the InAs0.97Sb0.03 compound is no higher than 3%. Most likely, the nonradiative channel is formed with involvement of Auger recombination with the constant C = 4.2 × 10−38 m6s−1 (T = 77 K). The studied samples of lasers feature relatively low optical losses ρ = 900 m−1 and internal quantum efficiency of emission at the level of 0.6. The spontaneous lifetime of nonequilibrium charge carriers as determined from the radiative-recombination rate is equal to 6 × 10−8 s, which is consistent with known published data. |
| Databáze: | OpenAIRE |
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