Photoresistive switching of multiferroic thin film memristors
| Autor: | Bojan Miljević, Goran Stojanovic, Jovan S. Bajić, Branimir Bajac, Elvira Đurđić, Nataša Samardžić, Vladimir V. Srdić |
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| Rok vydání: | 2018 |
| Předmět: |
Materials science
Photon Nanotechnology 02 engineering and technology Memristor 010402 general chemistry 01 natural sciences 7. Clean energy Signal law.invention law Multiferroics Electrical and Electronic Engineering Thin film business.industry 021001 nanoscience & nanotechnology Condensed Matter Physics Atomic and Molecular Physics and Optics 0104 chemical sciences Surfaces Coatings and Films Electronic Optical and Magnetic Materials Optoelectronics Photonics 0210 nano-technology business Excitation |
| Zdroj: | Microelectronic Engineering. :139-143 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/j.mee.2017.10.018 |
| Popis: | Activation and changes in the memristive switching behaviour with photon signals are becoming especially attractive due to advantages of photon signal in comparison with electrical signal, which can significantly expand possible applications of the memristors. In this paper, we present electrical response of multiferroic thin film memristor of structure Pt/BaTiO3/NiFe2O4/BaTiO3/Au, under various illumination conditions. Results indicate that combining photonic and electronic excitation qualifies multiferroic memristor as an appropriate candidate for UV sensing application, while it can also provide multilevel switching operation. |
| Databáze: | OpenAIRE |
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