RBS study of disordering of Fe 3‐x Mn x Si/Ge(111) heteroepitaxial interfaces

Autor:	Yuuya Noguchi, Seiji Sakai, Kazumasa Narumi, Yuki Kawakubo, Tomoaki Hirata, Yoshihito Maeda
Rok vydání:	2013
Předmět:	Crystallography Materials science Yield (engineering) Spintronics Diffusion Alloy engineering Substrate (electronics) engineering.material Condensed Matter Physics Epitaxy Rutherford backscattering spectrometry Stoichiometry
Zdroj:	physica status solidi c. 10:1732-1734
ISSN:	1610-1642 1862-6351
DOI:	10.1002/pssc.201300380
Popis:	We have investigated thermal disordering and instability of Fe3-xMnxSi (FMS)/Ge(111) heterointerfaces by Rutherford Backscattering Spectrometry (RBS). Pronounced degradation of the FMS/Ge interface was observed as an increase of the minimum yield of RBS when the FMS/Ge samples were annealed above 300 °C. Analysis of interdiffusion at the heterointerface reveals that the disordering mainly comes from interdiffusion between Fe, Mn atoms in the alloy and Ge atoms in the substrate. This diffusion behavior is same as that observed in off-stoichiometric Fe3Si (i.e. Fe4Si), but far from that in stoichiometric Fe3Si. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Databáze:	OpenAIRE
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