Carrier localization effect on luminescence spectra of III–V heterostructures
| Autor: | Tzer-En Nee, Ya-Fen Wu, Jen-Cheng Wang, Jiunn Chyi Lee |
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| Rok vydání: | 2011 |
| Předmět: |
Photoluminescence
Condensed matter physics Chemistry Biophysics Heterojunction General Chemistry Electronic structure Condensed Matter Physics Biochemistry Molecular physics Atomic and Molecular Physics and Optics Redshift Blueshift Condensed Matter::Materials Science Quantum dot Radiative transfer Luminescence |
| Zdroj: | Journal of Luminescence. 131:1267-1271 |
| ISSN: | 0022-2313 |
| DOI: | 10.1016/j.jlumin.2011.02.037 |
| Popis: | A steady-state rate-equation model for temperature-dependent luminescence spectra from localized-state material system is presented. The effects of thermal emission, recapturing, radiative and nonradiative recombination are taken into account in the model. Two localized-state material systems, including InAs/GaAs quantum-dot and InGaN/GaN-multi-quantum-well samples were prepared. It is found that the temperature-dependent behaviors of luminescence emission energy obtained from the two samples are quite different. In the mid-temperature range, the emission peaks exhibit a redshift for quantum-dot sample, but a blueshift for multi-quantum-well sample. The peak energies of the luminescence spectra are simulated in this model and show a good agreement with experiment. The corresponding luminescence mechanisms of carriers in localized-state material systems, which lead to the diversity are quantitatively discussed in detail by the model. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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