Effects of the Substrate on Piezoresistive Properties of Silicon Carbide Thin Films

Autor:	Humber Furlan, Luiz Antonio Rasia, Leandro L. Koberstein, Mariana A. Fraga
Rok vydání:	2012
Předmět:	chemistry.chemical_compound Materials science chemistry Silicon carbide Substrate (printing) Composite material Thin film Piezoresistive effect
Zdroj:	ECS Transactions. 44:1375-1380
ISSN:	1938-6737 1938-5862
Popis:	Silicon carbide (SiC), in bulk or film form, has been shown as a promising material to replace the silicon as sensing element in devices for harsh environments. This has motivated several studies on growth and characterization of SiC thin films on different substrates such as silicon, silicon dioxide (SiO2), aluminum nitride (AlN) and silicon nitride (Si3N4), among others. However, less attention has been given to the investigation on how substrates affect the piezoresistive properties of SiC thin films. In this work, we have investigated the effect of substrates on the piezoresistive properties of SiC thin films produced by magnetron sputtering. Three types of substrates were utilized: (100) monocrystalline silicon, AlN on silicon and thermally oxidized silicon. Test structures were fabricated using photolithography, metallization lift-off and RIE (reactive ion etching) processes in order to perform piezoresistive characterization of the SiC samples produced.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::d43f757248202743e8ad1938062867b3 https://doi.org/10.1149/1.3694474 Zobrazit plný text záznamu