Characterization of compensation and trapping in CdTe and CdZnTe: Recent advances

Autor:	Klaus-Werner Benz, Ernesto Diéguez, V. Babentsov, Jan Franc, P. Höschl, N. V. Sochinskii, R. B. James, Michael Fiederle
Rok vydání:	2009
Předmět:	Materials science business.industry Photoconductivity Detector Fermi energy General Chemistry Trapping Condensed Matter Physics Cadmium telluride photovoltaics Impurity Lattice (order) Optoelectronics General Materials Science Ingot business
Zdroj:	Crystal Research and Technology. 44:1054-1058
ISSN:	1521-4079 0232-1300
DOI:	10.1002/crat.200900348
Popis:	Results on the properties of the known impurities, Ge, Sn, V and Bi, and the lattice imperfections, VCd and TeCd are summarized. We discuss their role in compensation, and in buffering the variations in shallow electronic levels in the grown ingot. We demonstrate that (∼2÷3 kT) variations of the Fermi energy increases carrier trapping to the deep levels. Trapping is manifest in a photoconductivity signal that can be studied by photoconductivity methods, thus allowing to monitor the spectroscopic-grade material before fabricating the detectors. Our approach could be important in preventing the after-glow effect and polarization. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Databáze:	OpenAIRE
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