Autor:	F.J. Schmuckle, J. Gerdes, J.-F. Luy, Wolfgang Heinrich, Friedrich Schäffler, Helmut Jorke, Karl Strohm, C. Rheinfelder, Ralf Doerner, H. Kibbel
Rok vydání:	1995
Předmět:	Materials science Microwave amplifiers High resistivity silicon business.industry Amplifier Heterojunction bipolar transistor Hardware_PERFORMANCEANDRELIABILITY Hardware_GENERAL Hardware_INTEGRATEDCIRCUITS Mmic amplifiers Optoelectronics Ka band Electrical and Electronic Engineering business
Zdroj:	Electronics Letters. 31:1353-1354
ISSN:	1350-911X 0013-5194
Popis:	Design, technology and first results of a coplanar SiGe HBT amplifier monolithically integrated on high resistivity silicon are reported. The circuit provides a gain of 4 dB at 26 GHz.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::d42c91bb441f3ae4ed144ea627063cf3 https://doi.org/10.1049/el:19950940 Zobrazit plný text záznamu