Chemical bevelling of GaAs-based structures

Autor:	R. Srnanek, I. Novotny, I Hotovy, M. M. El Gomati
Rok vydání:	1997
Předmět:	Materials science business.industry Mechanical Engineering Linearity Condensed Matter Physics Bevel Gallium arsenide chemistry.chemical_compound Optics chemistry Mechanics of Materials Microscopy General Materials Science business
Zdroj:	Materials Science and Engineering: B. 47:127-130
ISSN:	0921-5107
DOI:	10.1016/s0921-5107(97)00024-x
Popis:	By using H 3 PO 4 /H 2 O 2 /H 2 O etchant bevels through GaAs based structures were prepared. The bevels had angles lower than 5×10 −4 rad and good profile linearity. For the bevel surface observation optical interference microscopy was used.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::d42bee255cdec85c419da4979bcfe3a1 https://doi.org/10.1016/s0921-5107(97)00024-x Zobrazit plný text záznamu Full Text from ScienceDirect