Growth of single-layer graphene on Ge (1 0 0) by chemical vapor deposition
| Autor: | Cesar D. Mendoza, F.L. Freire, P.G. Caldas, M.E.H. Maia da Costa |
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| Rok vydání: | 2018 |
| Předmět: |
Materials science
Scanning electron microscope General Physics and Astronomy 02 engineering and technology Chemical vapor deposition 010402 general chemistry 01 natural sciences law.invention symbols.namesake law Microscopy Deposition (phase transition) Quantum tunnelling business.industry Graphene Surfaces and Interfaces General Chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics 0104 chemical sciences Surfaces Coatings and Films Semiconductor symbols Optoelectronics 0210 nano-technology business Raman spectroscopy |
| Zdroj: | Applied Surface Science. 447:816-821 |
| ISSN: | 0169-4332 |
| Popis: | The integration of graphene into nanoelectronic devices is dependent on the availability of direct deposition processes, which can provide uniform, large-area and high-quality graphene on semiconductor substrates such as Ge or Si. In this work, we synthesised graphene directly on p-type Ge (1 0 0) substrates by chemical vapour deposition. The influence of the CH4:H2 flow ratio on the graphene growth was investigated. Raman Spectroscopy, Raman mapping, Scanning Electron Microscopy, Atomic Force Microscopy and Scanning Tunnelling Microscopy/Scanning Tunnelling Spectroscopy results showed that good quality and homogeneous monolayer graphene over a large area can be achieved on Ge substrates directly with optimal growth conditions. |
| Databáze: | OpenAIRE |
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