Valence and conduction band offsets of a ZrO2/SiOxNy/n-Si CMOS gate stack: A combined photoemission and inverse photoemission study
Autor: | M. M. Banaszak Holl, David Vanderbilt, E. P. Gusev, Safak Sayan, Robert Bartynski, Mark Croft, Eric Garfunkel, Xinyuan Zhao |
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Rok vydání: | 2004 |
Předmět: | |
Zdroj: | physica status solidi (b). 241:2246-2252 |
ISSN: | 1521-3951 0370-1972 |
DOI: | 10.1002/pssb.200404945 |
Popis: | The densities of states above and below the Fermi energy for the ZrO 2 /SiO x N y /n-Si system are examined by photoemission and inverse photoemission and compared with results from first principles calculations. The measured band gap of ZrO 2 is 5.68 eV and the valence and conduction band offsets relative to silicon are 3.40 and 1.16 eV respectively. |
Databáze: | OpenAIRE |
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