Valence and conduction band offsets of a ZrO2/SiOxNy/n-Si CMOS gate stack: A combined photoemission and inverse photoemission study

Autor: M. M. Banaszak Holl, David Vanderbilt, E. P. Gusev, Safak Sayan, Robert Bartynski, Mark Croft, Eric Garfunkel, Xinyuan Zhao
Rok vydání: 2004
Předmět:
Zdroj: physica status solidi (b). 241:2246-2252
ISSN: 1521-3951
0370-1972
DOI: 10.1002/pssb.200404945
Popis: The densities of states above and below the Fermi energy for the ZrO 2 /SiO x N y /n-Si system are examined by photoemission and inverse photoemission and compared with results from first principles calculations. The measured band gap of ZrO 2 is 5.68 eV and the valence and conduction band offsets relative to silicon are 3.40 and 1.16 eV respectively.
Databáze: OpenAIRE