InP/InGaAs bipolar phototransistor as a front-end photoreceiver for HPR distribution networks

Autor:	J. Thuret, J.L. Benchimol, C. Gonzalez, Muriel Riet, P. Legaud, J.F. Cadiou
Rok vydání:	2003
Předmět:	Materials science Distribution networks business.industry Bipolar junction transistor Photodetector System evaluation Gallium arsenide Photodiode law.invention Front and back ends chemistry.chemical_compound chemistry law Optoelectronics business Hybrid fibre
Zdroj:	International Topical Meeting on Microwave Photonics. MWP'99. Technical Digest (Cat. No.99EX301).
DOI:	10.1109/mwp.1999.819646
Popis:	The assessment of an improved InP/InGaAs phototransistor as a front-end photoreceiver for a hybrid fibre radio (HBF) link was realised. The phototransistor performances were investigated as a direct photodetector and as an up-converting mixer. A preliminary system evaluation of the device was performed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::d401d1f2eedd2160f8004c17cf703b94 https://doi.org/10.1109/mwp.1999.819646 Zobrazit plný text záznamu