Self-powered and temperature-tunable infrared-visible photodetector based on a VO2/Si heterojunction

Autor:	Razwan Siddique, Zeshan Adeel Umer, Syed Raza Ali Raza, Syeda Amna Sajjad, Zamir ul Hassan, Mohsin Rafique, S. Bukhari, Muhammad Anwar-ul-Haq
Rok vydání:	2021
Předmět:	Materials science Vanadium dioxide Acoustics and Ultrasonics business.industry Infrared Mott insulator Optoelectronics Photodetector Heterojunction Condensed Matter Physics business Surfaces Coatings and Films Electronic Optical and Magnetic Materials
Zdroj:	Journal of Physics D: Applied Physics. 54:165109
ISSN:	1361-6463 0022-3727
DOI:	10.1088/1361-6463/abdb0d
Popis:	In this work, a type-III heterojunction based on a pulsed-laser-deposited vanadium dioxide (VO2) and p-type silicon (p-Si) substrate is realized. The device shows a large self-powered and room-temperature photoresponse to IR (950 nm), green (515 nm) and blue (456 nm) LEDs. A short-circuit current (I sc) of ∼3 µA and an open-circuit voltage (V oc) of ∼−120 mV are observed under IR LED illumination. The work function data in literature along with the sign of V oc measurement is used to sketch the energy band diagram of the heterojunction. The temperature-dependent I sc properties of the junction, contrary to conventional photodetectors, show an initial rise and then a sharp transition from maximum (3.5 μA) to almost zero near 337 K, corresponding to a metal–insulator phase transition, paving the way for photodetectors with temperature-tunable photoresponsivity.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::d3f7f691fac772dd86f9fc68c15b2aeb https://doi.org/10.1088/1361-6463/abdb0d Zobrazit plný text záznamu