Analytical modelling of a Cyl-JLAM MOSFET in the subthreshold region using distinct device geometry
| Autor: | Biswajit Baral, Angsuman Sarkar, Sanjit Kumar Swain, Sarita Misra, Sudhansu Kumar Pati, Sudhansu Mohan Biswal |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Physical model Materials science Subthreshold conduction Geometry 02 engineering and technology Integrated circuit design 021001 nanoscience & nanotechnology 01 natural sciences Subthreshold slope Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Threshold voltage Modeling and Simulation 0103 physical sciences MOSFET Electrical and Electronic Engineering Poisson's equation 0210 nano-technology Communication channel |
| Zdroj: | Journal of Computational Electronics. 20:480-491 |
| ISSN: | 1572-8137 1569-8025 |
| Popis: | As short-channel effects (SCEs) are a major issue in the nanoscale regime, investigation of the subthreshold behaviour of nanometer-scale devices is critical. Here, we have developed an analytical model for a cylindrical gate junctionless accumulation-mode MOSFET (Cyl-JLAM MOSFET) to analyse its behaviour in the subthreshold region. The two-dimensional Poisson equation is solved to develop the analytical model by approximating the potential profile along the channel to be parabolic. We have formulated the expression for potential at the centre and electric field along the channel from the developed model. The key performance factors of SCEs including threshold voltage (VTH) roll-off, drain-induced barrier lowering and subthreshold slope are explored with respect to the geometry of the device parameters, i.e. body thickness of the cylindrical silicon pillar, length of the channel and thickness of the oxide layer. The results of our model are in good agreement with numerical simulations. The TCAD ATLAS 3D device simulator accounts for all the physical models required during the simulation. In this paper, the simple and distinctly formulated analytical model supports the application of the Cyl-JLAM MOSFET in integrated circuit design and optimization. |
| Databáze: | OpenAIRE |
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