Ab initioimpact ionization rate in GaAs, GaN, and ZnS
| Autor: | Ronald Redmer, N. Fitzer, A. Kuligk |
|---|---|
| Rok vydání: | 2005 |
| Předmět: |
Materials science
Condensed matter physics Ab initio Electronic structure Condensed Matter Physics Molecular physics Electronic Optical and Magnetic Materials Condensed Matter::Materials Science Impact ionization Ab initio quantum chemistry methods Scattering rate Density functional theory Local-density approximation Electronic band structure |
| Zdroj: | Physical Review B. 71 |
| ISSN: | 1550-235X 1098-0121 |
| DOI: | 10.1103/physrevb.71.085201 |
| Popis: | We have performed extensive ab initio band structure calculations within density functional theory using an exact exchange formalism with a local density approximation for correlations. The wave-vector-dependent impact ionization rate is determined for GaAs, GaN, and ZnS. A strong asymmetry of the microscopic scattering rate as well as a pronounced influence of the band structure is found. We present also energy-averaged impact ionization rates which can be used in ensemble Monte Carlo simulations of high-field electron transport in these materials. |
| Databáze: | OpenAIRE |
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