Effect of argon on the structure of hydrogenated nanocrystalline silicon deposited from tetrachlorosilane/hydrogen/argon plasma
| Autor: | Chao Sun, Lin Zhang, Lishi Wen, Jun Gong, Jinquan Xiao, Junhua Gao |
|---|---|
| Rok vydání: | 2012 |
| Předmět: |
Amorphous silicon
Argon Materials science Hydrogen Nanocrystalline silicon Analytical chemistry chemistry.chemical_element Surfaces and Interfaces Chemical vapor deposition Condensed Matter Physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention chemistry.chemical_compound chemistry law Plasma-enhanced chemical vapor deposition Materials Chemistry Electrical and Electronic Engineering Crystallization Thin film |
| Zdroj: | physica status solidi (a). 209:1080-1084 |
| ISSN: | 1862-6300 |
| Popis: | Hydrogenated nanocrystalline silicon films (nc-Si:H) have been deposited by the decomposition of tetrachlorosilane (SiCl4) diluted with hydrogen (H2) and argon (Ar) by a plasma-enhanced chemical vapor deposition (PECVD) method. Basing on the structural characterization of nc-Si:H, we have found that Ar affects the growth of films deposited at two substrate temperatures (Ts?=?250 and 120 degrees C) in different ways. At Ts?=?250 degrees C, the Ar gas deteriorates the crystallinity of nc-Si:H, whereas, at Ts?=?120 degrees C, the crystallization of nc-Si:H films is promoted with increasing argon flow rate (Hf) from 10 to 30?sccm; however, the extremely high Ar dilution adversely affects the ordered structure of films. Meanwhile, the hydrogen concentration in the films is also controlled by Hf. Finally, the effects of Ar in the SiCl4/H2/Ar system have been discussed in related to the equilibrium of atomic hydrogen and ionized argon. |
| Databáze: | OpenAIRE |
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