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IGZO/Ag bi-layered films were deposited on glass substrate at room temperature with radio fre-quency and direct current magnetron sputtering, respectively to consider the effect of Ag buffer layer on the elec-trical, optical and structural properties. For all deposition, while the thickness of Ag buffer layer was varied as 10,15, and 20 nm, The thickness of IGZO films were kept at 100 nm, In a comparison of figure of merit, IGZO filmswith 15 nm thick Ag buffer layer show the higher figure of merit (1.1× 10 2 Ω 1 ) than that of the IGZO single layerfilms (3.7× 10 4 Ω 1 ). From the observed results, it is supposed that the IGZO 100 nm/Ag 15 nm bi-layered filmsmay be an alternative candidate for transparent electrode in a transparent thin film transistor device.(Received July 0, 2014; Revised August 0, 2014; Accepted August 0, 2014)Key words : IGZO, Ag, Magnetron sputter, XRD, Figure of Merit 1. 서론 고해상도 영상이나 이미지를 구현하는 데 있어 현재의 비정질 실리콘 소재는 증착공정이 간단하고 공정비용이 저렴하지만, 상대적으로 낮은 이동도와 불투명한 광특성 등의 문제가 언급되고 있다[1].반면에, 저온 다결정 실리콘(Low TemperaturePoly-Si)은 상대적으로 전하 이동도가 높지만, 균일한대면적 증착이 어렵기 때문에 차세대 디스플레이를구동할 박막 트랜지스터(Thin Film Transistor;TFT)소재로는 한계에 부딪히고 있다[2]. |
