Property evaluation of spin coated Al doped ZnO thin films and Au/AZO/FTO Schottky diodes
Autor: | M.G. Mahesha, K. Mohan Rao, A.V. Muhammed Ali, Akshayakumar Kompa, U. Chaitra, Dhananjaya Kekuda |
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Rok vydání: | 2021 |
Předmět: |
010302 applied physics
Spin coating business.industry Schottky barrier Doping Schottky diode chemistry.chemical_element 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics Tin oxide 01 natural sciences chemistry Aluminium 0103 physical sciences Optoelectronics General Materials Science Electrical and Electronic Engineering Thin film 0210 nano-technology business Diode |
Zdroj: | Superlattices and Microstructures. 155:106903 |
ISSN: | 0749-6036 |
DOI: | 10.1016/j.spmi.2021.106903 |
Popis: | In the present work, the structural, optical and electrical properties of pristine and aluminium doped zinc oxide (AZO) thin films deposited on fluorine doped tin oxide (FTO) coated glass substrates by sol-gel spin coating technique are explored. Further, the effect of doping on the performance of Au/AZO/FTO Schottky diode were analysed through I–V characterization at room temperature. The c-axis orientation of the deposited films was confirmed by X-Ray diffraction studies. Micrographs from atomic force microscope revealed the wrinkled morphology and columnar structure for undoped and doped zinc oxide thin films respectively. The diode parameters such as Schottky barrier height (ΦB), ideality factor (n) and series resistance (Rs) were determined by using thermionic emission model and Cheung's model. These parameters were found to depend on the doping concentration. Devices with undoped and 6 at% aluminium doped ZnO thin films have shown better rectification. |
Databáze: | OpenAIRE |
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